HIGH Q InP-BASED VARACTOR DIODES
نویسندگان
چکیده
We report on high quality-factor Heterostructure Barrier Varactor making benefit of epitaxial stacking and planar integration, with a cut-off frequency in the far infrared region. To this aim, high doping concentrations in the depletion (2x10 17 cm) and contact (1x10 cm) InGaAs regions lattice matched to an InP substrate and an InAlAs/AlAs blocking barrier scheme were used. Planar integration of the devices with a number of barriers up to eight in coplanar waveguide and series-type configurations shows a zero-bias capacitance of 3.4 fF/μm per barrier and a conductance of 3.3 nS/μm along with an intrinsic capacitance ratio of 4.3:1. Index terms -Varactor diode, harmonic multiplier, heterostructure, substratetransfer, InP
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